Prof. CHENG Guang-lei

Title:       Correlated Oxide Nanoelectronics

Abstract:

The strong electron-electron interaction in the transitional metal oxides gives rise to a dizzying array of novel phenomena that are not present in conventional semiconductor systems. Meanwhile, semiconductors are clean and dilute enough for nanoelectronic applications which are hard to achieve in oxides. Here I present the concept of correlated oxide nanoelectronics to bridge the gap between semiconductor nanoelectronics and strongly correlated phenomena in oxides. I will give out several examples to show such combination has great advantages: 1) Nanoelectric tools are powerful to study correlated phenomena; and in return  2) Electron correlations add richness of properties to nanoelectronic devices. Specifically, I will talk about quantum transport study of electron correlations in superconducting single electron transistors and electron waveguides at the LaAlO3/SrTiO3 interface. Then, I will talk briefly on our recent progress on material design and transport study on 1D oxide nanowires. Finally, I envision possible future applications in quantum technologies.