Prof. ZENG Chang-gan

Title: Interlayer Quantum Drag Effect

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Abstract:

A closely spaced but electronically isolated electronic double-layer system is fascinating to study interlayer quasiparticle interactions and to reveal intriguing interlayer correlated states. Recent progresses in the development of graphene and other two-dimensional (2D) electronic systems have sparked renewed interest in the field of strong interlayer interactions and corresponding novel quantum phases. In particular, the highly tunable electronic properties of constituent 2D layers, together with the accessibility of ultra-small interlayer separation, enable the investigation of the drag effect in previously inaccessible strong-coupling regimes.

In this talk, I will present our recent work on the interlayer drag experiments in several graphene-based electronic double-layer systems, to reveal a fingerprint feature of drag effect between massless and massive fermions, to discover a new type of quantum interference effect in inter-layer Coulomb drag, and to demonstrate a giant and highly-tunable supercurrent drag effect. Our findings establish a novel platform, i.e., electronic double-layer systems, to exploit novel inter-layer quantum effects, and offer unforeseen opportunities for new-principle electronic devices.

 

Curriculum Vitae：

Education:

Ph.D. in Physics  University of Science and Technology of China      07/2002

Employment:

University of Science and Technology of China    Professor  Department of Physics       08/ 2007 – Current

Research Interests:

Low-dimensional Quantum Matter Physics

 

Selective Recent Publications (see a full publication list at http://staff.ustc.edu.cn/~cgzeng/publications.html):

• Ran Tao, Lin Li*, Hong-Yi Xie*, Xiaodong Fan, Linhai Guo, Lijun Zhu, Yuedong Yan, Zhenyu Zhang, and Changgan Zeng*, “Josephson–Coulomb drag effect between graphene and a LaAlO₃/SrTiO₃ superconductor”, Nat. Phys. 19, 372 (2023).

 

• Lijun Zhu, Xiaoqiang Liu, Lin Li*, Xinyi Wan, Ran Tao, Zhongniu Xie, Ji Feng*, and Changgan Zeng*, “Signature of quantum interference effect in inter-layer Coulomb drag in graphene-based electronic double-layer systems”, Nat. Commun. 14, 1465 (2023).

 

• Huayang Zhang, Xiaodong Fan*, Dongli Wang, Dongbo Zhang, Xiaoguang Li*, and Changgan Zeng*, “Electric field-controlled damping switches of coupled Dirac plasmons”, Phys. Rev. Lett. 129, 237402 (2022). Editors’ Suggestion

 

• Junchao Ma, Bin Cheng, Lin Li, Zipu Fan, Haimen Mu, Jiawei Lai, Xiaoming Song, Dehong Yang, Jinluo Cheng, Zhengfei Wang, Changgan Zeng*, and Dong Sun*, “Unveiling Weyl-related optical responses in semiconducting tellurium by mid-infrared circular photogalvanic effect”, Nat. Commun. 13, 5425 (2022).

 

• Hao Huang, Lixuan Zheng, Zhiyong Lin, Xu Guo, Sheng Wang, Shuai Zhang, Chi Zhang, Zhe Sun, Zhengfei Wang, Hongming Weng, Lin Li*, Tao Wu*, Xianhui Chen, and Changgan Zeng*, “Flat-band-induced anomalous anisotropic charge transport and orbital magnetism in kagome metal CoSn”, Phys. Rev. Lett. 128, 096601 (2022).

 

• Linhai Guo, Yuedong Yan, Rongge Xu, Jian Li*, and Changgan Zeng*, “Zero-bias conductance peaks effectively tuned by gating-controlled Rashba spin-orbit coupling”, Phys. Rev. Lett. 126, 057701 (2021).

 

• Nan Zhang, Gan Zhao, Lin Li*, Pengdong Wang, Lin Xi, Bin Cheng, Hui Lie, Zhiyong Lin, Chuanying Xi, Jiezun Ke, Ming Yang, Jiaqing He, Zhe Sun, Zhengfei Wang*, Zhenyu Zhang, and Changgan Zeng*, “Magneto-transport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium”, Proc. Natl. Acad. Sci. 117, 11337 (2020).

 

• Xinzhong Chen, Xiaodong Fan, Lin Li*, Nan Zhang, Zhijing Niu, Tengfei Guo, Suheng Xu, Han Xu, Dongli Wang, Huayang Zhang, A. S. McLeod, Zhenlin Luo, Qingyou Lu, Andrew J. Millis, D. N. Basov*, Mengkun Liu*, Changgan Zeng*, “Moiré Engineering of Electronic Phenomena in Correlated Oxides”, Nat. Phys. 16, 631 (2020).